25年前，我在处理类似H8系列的器件，这些器件采用当时相当先进的工艺技术，使用1.0μm甚至0.8μm CMOS技术。今天的石英晶体振荡器器件使用更先进的工艺技术，我们RA微控制器系列的最新器件采用40纳米技术，线宽比我以前使用的H8小25倍。

随着最新器件中的晶体管尺寸变得更小，并且更重要的是，晶体管开关频率变得更快，噪声成为导致器件故障的一个越来越大的因素。遥遥领先Renesas Oscillator噪音来源.

在上图中，您可以看到使用旧技术的器件与最新器件之间的简单比较，前者的晶体管工作沟道长度为1μm，器件通常采用当时的快速8 MHz时钟工作，晶体管开关速度较慢，后者的晶体管沟道长度为40 nm，工作频率高达200 MHz或更高。

在这种情况下，您可以看到切换时间要快得多，对于最新的晶体振荡器设备，我们试图处理的信号可能比噪声信号更快。因此，随着我们向更小的工艺几何发展，噪声已经成为一个更大的问题。瑞萨在我们的设备上采取了许多措施，设计了有助于在这种环境下工作的功能，精心设计的电源电路和优化的I/O缓冲器以及专业保护电路，但尽可能将设计中的任何影响降至最低仍然非常重要，因为最终，如果噪声进入设备，就很难消除。

Unfortunately, none of us live in this ideal world, no matter how much I would like to. The real world is dirty and noisy, and the power distribution in our designs is never perfect. The supply voltage can drop below the operating voltage range resulting in system malfunction or failure, switching transients create noise and reduce signal margins, and impedance discontinuities distort signals reducing signal margins.

Then to make matters worse, we have radiated or conducted noise from internal and external sources to contend with, electrostatic discharge and lightning surges interrupt or destroy systems, and thermal stress, mechanical stress, and component aging all can cause systems to fail. In this short series of blogs, I’d like to look at some of these issues and the measures we can apply to our designs to remove or at least minimize some of these issues.

In this first blog, I’d like to look at some of the typical sources of noise. The table shown here shows the two types of Electromagnetic compatibility or EMC. EMC is defined as the ability of electronic devices to function properly in their intended electromagnetic environment.

EMC comprises two distinct types: EMI or electromagnetic interference, and EMS or electromagnetic susceptibility. EMI is generally known as radiated noise and refers to the disturbances caused by noise, whereas EMS is known as Noise Susceptibility and refers to the damage done to the system due to noise.

In the table below, you can see the different types of EMC and the typical sort of phenomena that they cause. The third column lists some typical products that can be affected by EMI and EMS, resulting in disturbance in operation or damage to the system. This list is by no means complete and is meant only to show some typical examples.

Twenty-five years ago, I was dealing with devices like those in our H8 family, which were implemented on what was then quite advanced process technology, using 1.0μm or even 0.8μm CMOS technology. Today’s devices use significantly more advanced process technology, the latest devices in our RA microcontroller family being implemented on 40 nm technology, with line widths 25 times smaller than the H8 I used to use.

As the transistor size in the latest devices becomes smaller and, probably, more importantly, the transistor switching frequency becomes faster, noise becomes an increasing factor in terms of causing a device to malfunction.

In the diagram above, you can see a simplified comparison between a device using older technology, showing transistor operation with a channel length of 1μm, with the device typically operating from what was then a fast 8 MHz Clock, with a slow transistor switching speed and the latest devices operating at up to 200 MHz or beyond, with a transistor channel length is 40 nm.

In this case, you can see that the switching time is much faster, and for the latest devices, the signal we are trying to deal with can be faster than the noise signal. Therefore, noise has become a larger concern as we move toward smaller process geometry. Renesas has taken many steps on our devices, designing them with features to help operate in such an environment, with carefully designed power supply circuits and optimized I/O buffers and specialist protection circuitry, but it’s still very important to minimize any effects in our designs as much as possible, as at the end, if noise enters the device, it’s much harder to remove.