爱普生低电流差分晶振 SG2016VHN有源振荡器 X1G006121000 6G无线模块晶振，尺寸为2.00x1.60x0.73mm，频率为156.25MHz，输出逻辑LVDS，有源差分晶振，SPXO差分晶振，OSC差分晶振，LVDS差分输出振荡器，LVDS差分晶振，低电压差分晶振，低功耗差分晶振，6G将使网络通信流量呈指数级增长。6G通信网络要求高速宽频带，同时把噪音降到最低。这可以通过高频率，用于通信设备的低抖动参考时钟。光通信模块为400gbps /800gbps传输超过80公里需要一个小的外形因素，±20 × 10-6的稳定性参考时钟。SG2016VHN/SG2520VHN是非常受欢迎的SG3225VEN系列的下一代产品具有广泛的可用频率范围，低抖动和改进的频率容限的功能组合由于采用了内部设计的具有温度补偿的集成电路，其封装尺寸缩小了63%。
差分晶振LVDS产品非常适合用于高速转换器，如ADC和DAC，网络设备(路由器、交换机、光模块等)，数据中心，测试和测量设备，工厂自动化等领域。爱普生低电流差分晶振 SG2016VHN有源振荡器 X1G006121000 6G无线模块晶振.
爱普生低电流差分晶振 SG2016VHN有源振荡器 X1G006121000 6G无线模块晶振参数图
Parameter
Symbol
Specification
Unit
Conditions
Min.
Typ.
Max.
Maximum supply voltage
VCC
-0.3
-
4.0
V
Input voltage
Vin
-0.3
-
VCC+ 0.5
V
一一
OE/ST terminal
Storage temperature range
T_stg
-55
-
+125
°C
[ 3 ] Operating Range
Parameter
Symbol
Specification
Unit
Conditions
Min.
Typ.
Max.
Supply voltage
VCC
1.71
1.8
1.89
V
Suffix: E, Output option: A or C
2.375
2.5
2.625
V
Suffix: D
3.135
3.3
3.465
V
Suffix: C
Supply voltage
GND
0.0
0.0
0.0
V
Operating temperature range
T_use
-40
+25
+85
°C
Suffix: G
-40
+25
+105
°C
Suffix: H
LVDS load condition
L_LVDS
100
Ω
* Power supply startup time (0 %VCC→90 %VCC) should be more than 150 μs
* A 0.1 μF and a 10 μF bypass capacitor should be connected between VCCand GND pins located close to the device
Parameter
Symbol
Specification
Unit
Conditions
Min.
Typ.
Max.
Supply voltage
VCC
1.71
1.8
1.89
V
Suffix: E, Output option: A or C
2.375
2.5
2.625
V
Suffix: D
3.135
3.3
3.465
V
Suffix: C
Supply voltage
GND
0.0
0.0
0.0
V
Operating temperature range
T_use
-40
+25
+85
°C
Suffix: G
-40
+25
+105
°C
Suffix: H
LVDS load condition
L_LVDS
100
Ω
Parameter
Symbol
Specification
Unit
Conditions
Min.
Typ.
Max.
Output frequency *1
fo
156.25
MHz
Frequency tolerance *2
f_tol
-20
-
+20
×10-6
Suffix: C
Parameter
Symbol
Specification
Unit
Conditions
Min.
Typ.
Max.
Startup time
t_str
-
-
10
ms
t = 0 at 90 % VCC
Current consumption
ICC
-
-
25
mA
Output option: A, fo < 212 MHz
VCC= 2.5 V, 3.3 V Typ.
-
-
28
mA
Output option: A, fo≥212 MHz
VCC= 2.5 V, 3.3 V Typ.
-
-
30
mA
Output option: B, fo < 212 MHz
VCC= 2.5 V, 3.3 V Typ.
-
-
35
mA
Output option: B, fo≥212 MHz
VCC= 2.5 V, 3.3 V Typ.
-
-
25
mA
Output option: C, fo < 212 MHz
VCC= 2.5 V, 3.3 V Typ.
-
-
28
mA
Output option: C,
212 MHz≤fo < 392 MHz
VCC= 2.5 V, 3.3 V Typ.
-
-
30
mA
Output option: C, fo≥392 MHz
VCC= 2.5 V, 3.3 V Typ.
-
-
25
mA
Output option: A or C
VCC= 1.8 V Typ.
Disable current
I_dis
-
-
20
mA
OE = GND
Stand-by current
I_std
-
-
30
μA
= GND, T_use Max. = +85 °C
-
-
60
μA
= GND, T_use Max. = +105 °C
Rise time / Fall time
tr / tf
-
-
0.35
ns
20 % - 80 % of VSW
Symmetry
SYM
45
50
55
%
At output crossing point
Output voltage
VOD
250
-
450
mV
Output option: A
400
-
800
mV
Output option: B
Not available for VCC= 1.8 V Typ.
300
-
600
mV
Output option: C
dVOD
-
-
50
mV
|VOD1- VOD2|
VOS
1.15
-
1.35
V
VCC= 2.5 V, 3.3 V Typ.
0.65
-
0.85
V
VCC= 1.8 V Typ.
dVOS
-
-
50
mV
|VOS1- VOS2|
Differential swing
VSW
500
-
900
mV
Output option: A
800
-
1 600
mV
Output option: B
Not available for VCC= 1.8 V Typ.
600
-
1 200
mV
Output option: C
Input voltage
VIH
70 % VCC
-
-
V
OE/terminal
VIL
-
-
30 % VCC
V
Output disable time (OE)
tstp_oe
-
-
100
ns
Measured from the time OE
pin crosses 30 % VCC
Output disable time (ST)
tstp_st
-
-
100
ns
Measured from the time
pin crosses 30 % VCC
Output enable time (OE)
tsta_oe
-
-
500
ns
Measured from the time OE
pin crosses 70 % VCC
Output enable time (ST)
tsta_st
-
-
10
ms
Measured from the time
pin crosses 70 % VCC
Phase jitter
VCC= 2.5 V, 3.3 V Typ.
Offset frequency
fo < 50 MHz; 12 kHz to 5 MHz
fo≥50 MHz: 12 kHz to 20 MHz
tPJ
-
-
250
fs
fo < 100 MHz
-
-
100
fs
100 MHz≤fo≤156 MHz
-
-
60
fs
156 MHz < fo≤212 MHz
-
-
50
fs
fo > 212 MHz
Phase jitter
VCC= 1.8 V Typ.
Offset frequency
fo < 50 MHz: 12 kHz to 5 MHz
fo≥50 MHz: 12 kHz to 20 MHz
-
-
400
fs
fo < 100 MHz
-
-
130
fs
100 MHz≤fo≤156 MHz
-
-
70
fs
156 MHz < fo≤212 MHz
-
-
60
fs
fo > 212 MHz
爱普生低电流差分晶振 SG2016VHN有源振荡器 X1G006121000 6G无线模块晶振 尺寸图
产品特性：
晶体振荡器(SPXO)
更多相关日本爱普生晶振型号
| 编码 | 晶振厂家 | 型号 | 频率 | 尺寸 | 输出方式 | 电源电压 | 工作温度 |
| X1G0042410001 | 爱普生晶振 | SG3225VAN | 125.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410002 | 爱普生晶振 | SG3225VAN | 125.006250 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410004 | 爱普生晶振 | SG3225VAN | 100.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410005 | 爱普生晶振 | SG3225VAN | 200.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410006 | 爱普生晶振 | SG3225VAN | 400.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410007 | 爱普生晶振 | SG3225VAN | 106.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410008 | 爱普生晶振 | SG3225VAN | 212.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410009 | 爱普生晶振 | SG3225VAN | 74.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410010 | 爱普生晶振 | SG3225VAN | 148.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410011 | 爱普生晶振 | SG3225VAN | 75.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410012 | 爱普生晶振 | SG3225VAN | 150.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410014 | 爱普生晶振 | SG3225VAN | 156.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410015 | 爱普生晶振 | SG3225VAN | 312.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410016 | 爱普生晶振 | SG3225VAN | 312.515625 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410017 | 爱普生晶振 | SG3225VAN | 161.132800 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410020 | 爱普生晶振 | SG3225VAN | 125.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410021 | 爱普生晶振 | SG3225VAN | 125.006250 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410023 | 爱普生晶振 | SG3225VAN | 100.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410024 | 爱普生晶振 | SG3225VAN | 200.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410025 | 爱普生晶振 | SG3225VAN | 400.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410026 | 爱普生晶振 | SG3225VAN | 106.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410027 | 爱普生晶振 | SG3225VAN | 212.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410028 | 爱普生晶振 | SG3225VAN | 74.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410029 | 爱普生晶振 | SG3225VAN | 148.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410030 | 爱普生晶振 | SG3225VAN | 75.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410031 | 爱普生晶振 | SG3225VAN | 150.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410033 | 爱普生晶振 | SG3225VAN | 156.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410034 | 爱普生晶振 | SG3225VAN | 312.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410035 | 爱普生晶振 | SG3225VAN | 312.515625 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410036 | 爱普生晶振 | SG3225VAN | 161.132800 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -40 to 85 °C |
| X1G0042410039 | 爱普生晶振 | SG3225VAN | 125.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410040 | 爱普生晶振 | SG3225VAN | 125.006250 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410042 | 爱普生晶振 | SG3225VAN | 100.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410043 | 爱普生晶振 | SG3225VAN | 200.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410044 | 爱普生晶振 | SG3225VAN | 400.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410045 | 爱普生晶振 | SG3225VAN | 106.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410046 | 爱普生晶振 | SG3225VAN | 212.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410047 | 爱普生晶振 | SG3225VAN | 74.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410048 | 爱普生晶振 | SG3225VAN | 148.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410049 | 爱普生晶振 | SG3225VAN | 75.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410050 | 爱普生晶振 | SG3225VAN | 150.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410052 | 爱普生晶振 | SG3225VAN | 156.250000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410053 | 爱普生晶振 | SG3225VAN | 312.500000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410054 | 爱普生晶振 | SG3225VAN | 312.515625 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410055 | 爱普生晶振 | SG3225VAN | 161.132800 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410058 | 爱普生晶振 | SG3225VAN | 125.000000 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
| X1G0042410059 | 爱普生晶振 | SG3225VAN | 125.006250 MHz | 3.20 x 2.50 x 1.20 mm | LVDS | 2.250 to 3.630 V | -20 to 70 °C |
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